IPD70N10S312ATMA2 vs IPD35N10S3L26ATMA2 Comparison

Detailed side-by-side comparison of IPD70N10S312ATMA2 by Infineon and IPD35N10S3L26ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 βœ“ Active

Specification Comparison

Parameter IPD70N10S312ATMA2 IPD35N10S3L26ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.69 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 β€”
Technology OptiMOS-T Power-MOSFET (N-Channel) Trench MOSFET (OptiMOS-T)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 35 A
Power Dissipation (Ptot, Tc=25C) 125 W β€”
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Operating Temperature Range -55C to +175C [DATA_NEEDED: Tj min/max]
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) 3 (Drain, Source, Gate + tab)
Channel Type N-Channel Enhancement Mode β€”
RoHS Status Compliant Compliant
MSL Level 1 (unlimited floor life) [DATA_NEEDED: MSL rating]
Avalanche Rated Yes β€”
Product Family β€” OptiMOS-T
Transistor Type β€” N-Channel MOSFET
On-Resistance R<sub>DS(on)</sub> max β€” 24 mOhm
Power Dissipation (Ptot, Tc) β€” 71 W
Gate Threshold V<sub>GS(th)</sub> β€” [DATA_NEEDED: gate threshold typical/range]
Automotive Qualification β€” AEC-Q101
Lead-Free β€” Yes

Datasheets & Resources

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