IPD70N10S3L12ATMA2 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of IPD70N10S3L12ATMA2 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD70N10S3L12ATMA2 - 100V N-Ch OptiMOS 11.5mOhm 70A | Infineon
IPD70N10S3L12ATMA2 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | IPD70N10S3L12ATMA2 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S3L12ATMA2 | ISC045N03L5SATMA1 |
| Technology | OptiMOS-T (N-Channel Trench MOSFET) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TC | 70 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | Β±20 V |
| On-State Resistance R_DS(on) typ @ VGS=10V | 11.5 mOhm | β |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | β |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD at TC | 125 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TO252-3-11 (DPAK) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |