IPD70R1K4P7SAUMA1 vs IPD60R280P7SAUMA1 Comparison

Detailed side-by-side comparison of IPD70R1K4P7SAUMA1 by Infineon and IPD60R280P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 βœ“ Active
Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΞ© CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΞ© CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPD70R1K4P7SAUMA1 IPD60R280P7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.48
Manufacturer Infineon Technologies β€”
Part Family CoolMOS P7 (700V Superjunction) β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 700 V 600 V
Continuous Drain Current (ID) at Tc=25C 4 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 4 V max @ ID = 190 Β΅A
Total Power Dissipation (Ptot) at Tc=25C 23 W β€”
Operating Junction Temperature -55C to +150C β€”
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Technology Superjunction (CoolMOS P7) CoolMOS P7 Superjunction (SJ) N-channel
Avalanche Energy Rated Yes (100% avalanche tested) β€”
ESD Protection Integrated (per datasheet) β€”
RoHS Status Compliant Compliant
Continuous Drain Current (ID, Tc) β€” 12 A
Static Drain-Source On-Resistance (RDS(on)) β€” 280 mΞ© (typical)
Gate-Source Voltage (VGS) Max β€” Β±20 V
Total Power Dissipation (Ptot, Tc) β€” 53 W
Operating Junction Temperature (TJ) β€” -40 Β°C to +150 Β°C
MSL Level β€” 1
Series β€” CoolMOS P7 (7th generation, 600 V)
Integrated ESD Protection β€” Yes

Datasheets & Resources

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