IPD70R1K4P7SAUMA1 vs IPD80R1K4P7ATMA1 Comparison
Detailed side-by-side comparison of IPD70R1K4P7SAUMA1 by Infineon and IPD80R1K4P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD70R1K4P7SAUMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS P7 (700V Superjunction) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 700 V | 800 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | 4 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 3.5 V (typ) |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | β |
| Operating Junction Temperature | -55C to +150C | -55C to +150C |
| Package | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | 3 (Gate, Drain/Tab, Source) |
| Technology | Superjunction (CoolMOS P7) | N-Channel Superjunction |
| Avalanche Energy Rated | Yes (100% avalanche tested) | Yes |
| ESD Protection | Integrated (per datasheet) | β |
| RoHS Status | Compliant | Compliant |
| Series | β | CoolMOS P7 |
| On-Resistance (RDS(on)) typ/max | β | 1.2 ohm typ / 1.4 ohm max |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ptot) | β | 32 W |
| REACH Status | β | Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Body Diode | β | Integrated, fast recovery |