IPD70R1K4P7SAUMA1 vs IPL65R070C7AUMA1 Comparison
Detailed side-by-side comparison of IPD70R1K4P7SAUMA1 by Infineon and IPL65R070C7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL65R070C7AUMA1
IPL65R070C7AUMA1 - 650V 70mΞ© CoolMOS C7 MOSFET | Infineon
IPL65R070C7AUMA1 β ActiveSpecification Comparison
| Parameter | IPD70R1K4P7SAUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $1.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS P7 (700V Superjunction) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 700 V | 650 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/range] |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | β |
| Operating Junction Temperature | -55C to +150C | -55Β°C to +150Β°C |
| Package | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Technology | Superjunction (CoolMOS P7) | Superjunction N-Channel MOSFET |
| Avalanche Energy Rated | Yes (100% avalanche tested) | β |
| ESD Protection | Integrated (per datasheet) | β |
| RoHS Status | Compliant | Compliant |
| Series | β | CoolMOS C7 |
| Continuous Drain Current (ID) at TC=25Β°C | β | 28 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | [DATA_NEEDED: ID at TC=100Β°C] |
| On-Resistance RDS(on) max at VGS=10V | β | 70 mΞ© (typical) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 169 W |
| Avalanche Energy (EAS) | β | 171 mJ |
| Configuration | β | Single with built-in diode |
| Channel Type | β | N-Channel |
| Lead-Free | β | Yes |
| MSL Level | β | [DATA_NEEDED: MSL rating] |