IPD70R1K4P7SAUMA1 vs IPN70R1K4P7SATMA1 Comparison

Detailed side-by-side comparison of IPD70R1K4P7SAUMA1 by Infineon and IPN70R1K4P7SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 βœ“ Active
Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 βœ“ Active

Specification Comparison

Parameter IPD70R1K4P7SAUMA1 IPN70R1K4P7SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolMOS P7 (700V Superjunction) β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 700 V β€”
Continuous Drain Current (ID) at Tc=25C 4 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (Ptot) at Tc=25C 23 W β€”
Operating Junction Temperature -55C to +150C β€”
Package PG-TO252-3 (DPAK) PG-SOT223 (3-pin + tab, surface mount)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Technology Superjunction (CoolMOS P7) Superjunction (CoolMOS P7)
Avalanche Energy Rated Yes (100% avalanche tested) β€”
ESD Protection Integrated (per datasheet) β€”
RoHS Status Compliant Compliant
Product Series β€” CoolMOS P7
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) β€” 700 V
Continuous Drain Current (ID) at TC β€” 4 A
Static Drain-Source On-Resistance (RDS(on)) β€” 1.4 ohm class (per '1K4' suffix)
Total Power Dissipation (PD) at TC β€” 6.2 W
Operating Temperature Range β€” -55C to +150C (TJ)
Configuration β€” Single with built-in diode
DPAK Footprint Compatible β€” Yes (drop-in alternative to DPAK per datasheet)
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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