IPD78CN10NGATMA1 vs IPD031N03LGATMA1 Comparison
Detailed side-by-side comparison of IPD78CN10NGATMA1 by Infineon and IPD031N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveSpecification Comparison
| Parameter | IPD78CN10NGATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 2 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Tc=25C | 13 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm | β |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) Max at Tc=25C | 31 W | β |
| Operating Junction Temperature Max | 175 C | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + Tab | β |
| Lead Plating | Pb-free (Matte Tin) | β |
| RoHS Compliance | Compliant | β |
| JEDEC Qualification | Qualified per JEDEC1 for target application | β |
| Technology | OptiMOS 2 Power-Transistor | MOSFET (Metal Oxide), OptiMOS 3 |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ 25 Β°C | β | 90 A (Tc) |
| Power Dissipation (Pd) | β | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | β | 3.1 mΞ© |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | β | 4.5 V, 10 V |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | β | Ultra low (per datasheet tagline) |
| Operating Temperature | β | -55 Β°C to +175 Β°C (junction) |
| Package | β | PG-TO252-3-11 (DPAK-2) |
| Mounting Tab | β | Drain (electrically connected) |
| Avalanche Energy Rated | β | Yes (per OptiMOS 3 datasheet family) |
| RoHS Status | β | Compliant |