IPD80R1K4P7ATMA1 vs IPD70R1K4P7SAUMA1 Comparison
Detailed side-by-side comparison of IPD80R1K4P7ATMA1 by Infineon and IPD70R1K4P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R1K4P7ATMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | β |
| Technology | N-Channel Superjunction | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 800 V | 700 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | 4 A |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | β |
| Power Dissipation (Ptot) | 32 W | β |
| Operating Junction Temperature | -55C to +150C | -55C to +150C |
| Package | PG-TO252-2 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain/Tab, Source) | 3 (Gate, Drain, Source) |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Avalanche Energy Rated | Yes | Yes (100% avalanche tested) |
| Body Diode | Integrated, fast recovery | β |
| Part Family | β | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V, ID | β | 1.4 ohm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | β | 23 W |
| ESD Protection | β | Integrated (per datasheet) |