IPD80R1K4P7ATMA1 vs IPN80R1K2P7ATMA1 Comparison

Detailed side-by-side comparison of IPD80R1K4P7ATMA1 by Infineon and IPN80R1K2P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 βœ“ Active
Infineon
IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 - 800V CoolMOS P7 1.2Ξ© N-MOSFET | Infineon

IPN80R1K2P7ATMA1 - 800V CoolMOS P7 1.2Ξ© N-MOSFET | Infineon

IPN80R1K2P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPD80R1K4P7ATMA1 IPN80R1K2P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.51
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 β€”
Technology N-Channel Superjunction Superjunction (CoolMOS)
Drain-Source Voltage (VDS) 800 V β€”
Continuous Drain Current (ID) at Tc=25C 4 A β€”
On-Resistance (RDS(on)) typ/max 1.2 ohm typ / 1.4 ohm max β€”
Gate Threshold Voltage (VGS(th)) 3.5 V (typ) β€”
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] β€”
Power Dissipation (Ptot) 32 W β€”
Operating Junction Temperature -55C to +150C β€”
Package PG-TO252-2 (DPAK) SOT-223 (3-pin, 2 + tab)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain/Tab, Source) β€”
RoHS Status Compliant β€”
REACH Status Compliant β€”
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes β€”
Body Diode Integrated, fast recovery β€”
Family / Series β€” CoolMOS P7
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage VDSS β€” 800 V
Continuous Drain Current ID (Tc) β€” 4.5 A
Maximum RDS(on) β€” 1200 mΞ© at VGS = 10 V
Power Dissipation PD (Tc) β€” 6.8 W
Gate-Source Voltage VGSS β€” [DATA_NEEDED: VGSS absolute maximum]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Operating Temperature Range β€” -55Β°C to +150Β°C (TJ)
ESD Protection β€” ESD-protected gate (per CoolMOS P7 family)
RoHS Compliance β€” Compliant

Datasheets & Resources

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