IPD80R1K4P7ATMA1 vs IPN95R3K7P7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R1K4P7ATMA1 by Infineon and IPN95R3K7P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN95R3K7P7ATMA1
IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon
IPN95R3K7P7ATMA1 β ActiveSpecification Comparison
| Parameter | IPD80R1K4P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | N-Channel Superjunction | Super-junction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 800 V | 950 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | β |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | β |
| Power Dissipation (Ptot) | 32 W | β |
| Operating Junction Temperature | -55C to +150C | -55 C to +150 C |
| Package | PG-TO252-2 (DPAK) | PG-SOT223 (3-pin + tab, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain/Tab, Source) | β |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes | β |
| Body Diode | Integrated, fast recovery | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | β | 2.0 A |
| Power Dissipation (Pd) at Tc | β | 6 W |
| On-State Resistance (RDS(on)) max | β | 3700 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | β | [DATA_NEEDED: VGS(th) typ] |
| Lead-Free | β | Yes |