IPD80R600P7ATMA1 vs IPB60R190C6ATMA1 Comparison
Detailed side-by-side comparison of IPD80R600P7ATMA1 by Infineon and IPB60R190C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R600P7ATMA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.45 |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | β |
| Pulsed Drain Current (IDM) | 22 A | β |
| On-Resistance (RDS(on), max) | 600 mΞ© at VGS=10V | β |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | 3.5 V (typ) |
| Maximum Gate-Source Voltage (VGS) | Β±30 V | β |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | β |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C |
| Package | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS C6 Superjunction N-Channel MOSFET |
| Polarity | N-Channel | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Continuous Drain Current (ID) at Tc=25C | β | 20.2 A |
| Power Dissipation (PD) at Tc=25C | β | 151 W |
| On-Resistance RDS(on) max at VGS=10V | β | 190 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) typ | β | 32 nC |
| Pin Count | β | 3 (Gate, Drain, Source) |
| RoHS Status | β | Compliant |
| Avalanche Energy Rated | β | Yes (EAS per datasheet) |