IPD80R600P7ATMA1 vs IPB60R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R600P7ATMA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R600P7ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.88 |
| Drain-Source Voltage (VDS) | 800 V | β |
| Continuous Drain Current (ID, Tc) | 8 A | β |
| Pulsed Drain Current (IDM) | 22 A | β |
| On-Resistance (RDS(on), max) | 600 mΞ© at VGS=10V | β |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | β |
| Maximum Gate-Source Voltage (VGS) | Β±30 V | β |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | β |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | β |
| Operating Temperature Range | -55 C to +150 C | -55 Β°C to +150 Β°C (T_j max) |
| Package | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | Superjunction (SJ) |
| Polarity | N-Channel | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS P7 (600 V) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | β | 600 V |
| Continuous Drain Current (I_D, T_C=25Β°C) | β | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | β | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | β | 3.5 V |
| Power Dissipation P_D (T_C=25Β°C) | β | 53 W |
| Pin Count | β | 3 (2 + Tab) |
| Configuration | β | Single N-Channel |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Generation | β | 7th Gen CoolMOS (successor to P6) |