IPD80R600P7ATMA1 vs IPD068N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPD80R600P7ATMA1 by Infineon and IPD068N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD80R600P7ATMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.65 |
| Drain-Source Voltage (VDS) | 800 V | 100 V |
| Continuous Drain Current (ID, Tc) | 8 A | β |
| Pulsed Drain Current (IDM) | 22 A | β |
| On-Resistance (RDS(on), max) | 600 mΞ© at VGS=10V | β |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | β |
| Maximum Gate-Source Voltage (VGS) | Β±30 V | β |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | β |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Polarity | N-Channel | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | β | 90 A |
| On-Resistance RDS(on) max | β | 6.8 mOhm |
| Power Dissipation (PD) at Tc | β | 150 W |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 4.0 V (typical) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Channel Type | β | N-Channel |
| Configuration | β | Single |
| RoHS Status | β | Compliant |
| Packing | β | Tape & Reel (T/R) |
| Qualification | β | Industrial (non-automotive) |