IPD80R600P7ATMA1 vs IPD60R360P7SAUMA1 Comparison
Detailed side-by-side comparison of IPD80R600P7ATMA1 by Infineon and IPD60R360P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R600P7ATMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.65 |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | β |
| Pulsed Drain Current (IDM) | 22 A | β |
| On-Resistance (RDS(on), max) | 600 mΞ© at VGS=10V | β |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | β |
| Maximum Gate-Source Voltage (VGS) | Β±30 V | β |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | β |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (junction) |
| Package | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | Superjunction (SJ) N-Channel MOSFET |
| Polarity | N-Channel | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Series | β | CoolMOS P7 |
| Continuous Drain Current (ID) at TC | β | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | β | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | β | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | β | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Package / Case | β | PG-TO252-3 (DPAK) |
| Number of Pins | β | 3 |
| RoHS Status | β | Compliant |
| Channel Type | β | N-Channel |