IPD80R600P7ATMA1 vs IPD80R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R600P7ATMA1 by Infineon and IPD80R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD80R600P7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.62 |
| Drain-Source Voltage (VDS) | 800 V | β |
| Continuous Drain Current (ID, Tc) | 8 A | β |
| Pulsed Drain Current (IDM) | 22 A | β |
| On-Resistance (RDS(on), max) | 600 mΞ© at VGS=10V | β |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | β |
| Maximum Gate-Source Voltage (VGS) | Β±30 V | β |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | β |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | Superjunction (CoolMOS P7) |
| Polarity | N-Channel | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS P7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 800 V |
| Continuous Drain Current (I_D, Tc) | β | 17 A |
| R_DS(on) max at V_GS=10V | β | 280 mOhm |
| Power Dissipation (P_D, Tc) | β | 101 W |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Operating Junction Temperature | β | -55C to +150C |
| ESD Protection | β | Integrated (per datasheet) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |