IPD80R750P7ATMA1 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPD80R750P7ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveSpecification Comparison
| Parameter | IPD80R750P7ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOS P7 | β |
| Part Number | IPD80R750P7ATMA1 | β |
| FET Type | N-Channel | β |
| Technology | CoolMOS (Super-Junction) | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 800 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 7 A | β |
| On-Resistance (RDS(on)) max at VGS=10V | 750 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | β |
| Power Dissipation (PD) at TC=25C | 51 W | β |
| Package / Case | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Protection | Integrated Zener (ESD protected) | β |
| Packaging | Tape & Reel (ATMA1) | β |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc | β | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | β | 9 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Package | β | PG-TO252-3-11 (DPAK) |
| Pin Count | β | 3 (2 + Tab) |
| Automotive Qualification | β | AEC-Q101 |
| Lead-Free / Halogen-Free | β | [DATA_NEEDED] |