IPD90N03S4L02ATMA1 vs IPD031N06L3GATMA1 Comparison

Detailed side-by-side comparison of IPD90N03S4L02ATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD90N03S4L02ATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.48
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS-T2 trench MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Tc 90 A β€”
Power Dissipation (PD) at Tc 136 W β€”
RDS(on) Max at VGS=10 V 2.2 mΞ© β€”
RDS(on) Max at VGS=4.5 V [DATA_NEEDED: typical value at VGS=4.5 V] β€”
Gate Drive Voltage (VGS) 4.5 V to 10 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical value] 1.0 V to 2.2 V
Operating Junction Temperature -55Β°C to +175Β°C β€”
Avalanche Rated 100% Avalanche tested β€”
Package PG-TO252-3-11 (DPAK, surface mount) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow) 1 (Unlimited)
RoHS Status Compliant (Green Package) Compliant
Automotive Qualification AEC-Q101 qualified β€”
Series OptiMOS-T2 OptiMOS 3
Continuous Drain Current (ID) at TC=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” 400 A
Maximum Power Dissipation (PD) at TC=25Β°C β€” 167 W
RDS(on) Max at VGS=10V β€” 3.1 mΞ©
Gate Drive Voltage (Max RDS(on)) β€” 4.5 V, 10 V
Total Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typical value]
Operating Temperature Range β€” -55Β°C to +175Β°C

Datasheets & Resources

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