IPD90N03S4L02ATMA1 vs IPT007N06NATMA1 Comparison
Detailed side-by-side comparison of IPD90N03S4L02ATMA1 by Infineon and IPT007N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 β ActiveInfineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β ActiveSpecification Comparison
| Parameter | IPD90N03S4L02ATMA1 | IPT007N06NATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $2.84 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| Power Dissipation (PD) at Tc | 136 W | β |
| RDS(on) Max at VGS=10 V | 2.2 mΞ© | β |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | β |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Package | PG-TO252-3-11 (DPAK, surface mount) | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow) | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | β |
| Series | OptiMOS-T2 | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, TC=25C) | β | 300 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | β | 0.75 mOhm |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | β | 375 W |
| Operating Temperature Range | β | -55 C to +175 C (TJ) |
| Configuration | β | Single N-channel |
| Gate Charge (QG) | β | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | β | [DATA_NEEDED: RthJC] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Standard Pack Quantity | β | 3000 (Tape & Reel) |