IPD90N06S404ATMA2 vs IPD068N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPD90N06S404ATMA2 by Infineon and IPD068N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 βœ“ Active

Specification Comparison

Parameter IPD90N06S404ATMA2 IPD068N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.65
FET Type N-Channel, Enhancement Mode β€”
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tc) 90 A β€”
Power Dissipation (PD, Tc) 150 W β€”
On-Resistance (RDS(on)) 3.8 mΞ© (typ) at VGS = 10 V β€”
Package PG-TO252-3-11 (DPAK), 3-pin surface mount PG-TO252-3 (DPAK, 2 leads + tab)
Operating Temperature (TJ max) 175 Β°C β€”
Peak Reflow Temperature 260 Β°C (MSL1) β€”
Avalanche Rating 100% Avalanche Tested β€”
Automotive Qualification AEC-Q101 β€”
Technology OptiMOS OptiMOS 3 (N-Channel, Enhancement Mode)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (Green Product) Compliant
MSL Level MSL1 1
Polarity Single N-Channel β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc β€” 90 A
On-Resistance RDS(on) max β€” 6.8 mOhm
Power Dissipation (PD) at Tc β€” 150 W
Gate Threshold Voltage VGS(th) β€” 2.0 V to 4.0 V (typical)
Operating Junction Temperature β€” -55 C to +175 C
Channel Type β€” N-Channel
Configuration β€” Single
Packing β€” Tape & Reel (T/R)
Qualification β€” Industrial (non-automotive)

Datasheets & Resources

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