IPD90N06S404ATMA2 vs IPD30N06S215ATMA2 Comparison

Detailed side-by-side comparison of IPD90N06S404ATMA2 by Infineon and IPD30N06S215ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 βœ“ Active
Infineon
IPD30N06S215ATMA2 IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 βœ“ Active

Specification Comparison

Parameter IPD90N06S404ATMA2 IPD30N06S215ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.36
FET Type N-Channel, Enhancement Mode β€”
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID, Tc) 90 A 30 A
Power Dissipation (PD, Tc) 150 W 136 W
On-Resistance (RDS(on)) 3.8 mΞ© (typ) at VGS = 10 V β€”
Package PG-TO252-3-11 (DPAK), 3-pin surface mount β€”
Operating Temperature (TJ max) 175 Β°C β€”
Peak Reflow Temperature 260 Β°C (MSL1) β€”
Avalanche Rating 100% Avalanche Tested β€”
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Technology OptiMOS β€”
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (Green Product) β€”
MSL Level MSL1 MSL1 (up to 260 C peak reflow)
Polarity Single N-Channel β€”
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS Power MOSFET
Transistor Type β€” N-Channel Enhancement Mode
Package / Case β€” PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab)
Operating Temperature β€” -55 C to +175 C (junction)
Avalanche Tested β€” 100% avalanche tested
Lead-Free / RoHS β€” Green package (lead free), RoHS compliant
Gate Threshold Type β€” Logic-level compatible
Packing β€” Tape & Reel (T/R)

Datasheets & Resources

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