IPD90N06S407ATMA2 vs IPD70N10S312ATMA1 Comparison

Detailed side-by-side comparison of IPD90N06S407ATMA2 by Infineon and IPD70N10S312ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 βœ“ Active
Infineon
IPD70N10S312ATMA1 IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 βœ“ Active

Specification Comparison

Parameter IPD90N06S407ATMA2 IPD70N10S312ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $0.92
FET Type N-Channel Enhancement Mode N-Channel, Enhancement Mode
Drain-to-Source Voltage (V_DS) 60 V β€”
Continuous Drain Current (I_D at T_C) 90 A β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] β€”
R_DS(on) Max at V_GS=10 V, I_D=90 A 6.9 mOhm β€”
Gate Threshold Voltage (V_GS(th)) 4 V at 40 uA β€”
Total Gate Charge (Q_G) at V_GS=10 V 56 nC β€”
Maximum Power Dissipation (P_D at T_C) 79 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Storage Temperature [DATA_NEEDED: storage temperature range] β€”
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (Green Product) β€”
MSL (Moisture Sensitivity Level) MSL1 (up to 260 C peak reflow) β€”
Automotive Qualification AEC-Q101 Qualified AEC-Q101
Avalanche Rating 100% Avalanche Tested β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IPD70N10S312ATMA1
Product Family β€” OptiMOS-T Power-Transistor
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 70 A
Pulsed Drain Current (IDM) β€” 180 A
Power Dissipation (PD, Tc) β€” 125 W
On-State Resistance (RDS(on)) β€” 11.1 mΞ© @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Input Capacitance (Ciss) β€” 4355 pF @ 25 V
Total Gate Charge (Qg) β€” 65 nC @ 10 V
Operating Temperature (TJ) β€” -55 Β°C to +175 Β°C
MSL Level β€” MSL1 (up to 260 Β°C peak reflow)
Avalanche Tested β€” 100 % (per datasheet)
RoHS Compliance β€” Green product, RoHS compliant

Datasheets & Resources

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