IPG16N10S461AATMA1 vs BSC0902NSIATMA1 Comparison
Detailed side-by-side comparison of IPG16N10S461AATMA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG16N10S461AATMA1
IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΞ© MOSFET | Infineon
IPG16N10S461AATMA1 β ActiveInfineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | IPG16N10S461AATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array | β |
| Technology | OptiMOSβ’ trench | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) | 16 A | β |
| On-Resistance R_DS(on) typ. | 61 mΞ© | β |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25Β°C) | β |
| Configuration | 2 N-Channel (Dual, separate) | β |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +150C (junction) |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-6 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Terminal Count | 8 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Built-in Body Diode | Yes | β |
| Channel Mode | Enhancement | β |
| Product Family | β | OptiMOS 30V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | β | 23 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | β | 2.8 mOhm |
| Gate Charge QG(0V..10V) | β | 24 nC |
| Output Charge QOSS | β | 17 nC |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 48 W |
| Built-in Diode | β | Yes (single with built-in diode) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |