IPG16N10S461AATMA1 vs BSC0906NSATMA1 Comparison
Detailed side-by-side comparison of IPG16N10S461AATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG16N10S461AATMA1
IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΞ© MOSFET | Infineon
IPG16N10S461AATMA1 β ActiveInfineon
BSC0906NSATMA1
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
BSC0906NSATMA1 β ActiveSpecification Comparison
| Parameter | IPG16N10S461AATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Product Type | Dual N-Channel MOSFET Array | β |
| Technology | OptiMOSβ’ trench | OptiMOS |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) | 16 A | β |
| On-Resistance R_DS(on) typ. | 61 mΞ© | β |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25Β°C) | β |
| Configuration | 2 N-Channel (Dual, separate) | β |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +150C (junction, typical) |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Terminal Count | 8 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Built-in Body Diode | Yes | β |
| Channel Mode | Enhancement | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 63 A |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 30 W |
| RDS(on) max (typical reference) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg @ VGS=10V] |
| Pin Count | β | 8 |