IPG16N10S461AATMA1 vs IPG20N06S2L65AATMA1 Comparison

Detailed side-by-side comparison of IPG16N10S461AATMA1 by Infineon and IPG20N06S2L65AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG16N10S461AATMA1

IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΞ© MOSFET | Infineon

IPG16N10S461AATMA1 βœ“ Active
Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active

Specification Comparison

Parameter IPG16N10S461AATMA1 IPG20N06S2L65AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Product Type Dual N-Channel MOSFET Array β€”
Technology OptiMOSβ„’ trench OptiMOS Trench MOSFET
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) 16 A 20 A (per channel)
On-Resistance R_DS(on) typ. 61 mΞ© β€”
Total Power Dissipation (Ptot) 29 W (T_C = 25Β°C) β€”
Configuration 2 N-Channel (Dual, separate) β€”
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] β€”
Maximum Junction Temperature 175 Β°C β€”
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Package PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-10 (TDSON-8 EP, wettable flank)
Mounting Type Surface Mount Surface Mount
Terminal Count 8 β€”
MSL Level [DATA_NEEDED: MSL rating] MSL1 (peak reflow 260 C)
RoHS Status Compliant Compliant (Green Product)
Built-in Body Diode Yes β€”
Channel Mode Enhancement β€”
Series β€” OptiMOS
FET Type β€” Dual N-Channel (Half Bridge / Independent)
Drain-to-Source Voltage (VDS) β€” 55 V
Power Dissipation (PD) β€” 43 W
Gate Threshold (VGS(th)) β€” Logic-Level
Operating Temperature β€” -55 C to +175 C
AEC-Q101 Qualification β€” Yes
Avalanche Tested β€” 100% (per datasheet)
AOI Compatible β€” Yes (wettable flank)

Datasheets & Resources

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