IPG20N04S408ATMA1 vs IPG20N06S2L65AATMA1 Comparison
Detailed side-by-side comparison of IPG20N04S408ATMA1 by Infineon and IPG20N06S2L65AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon
IPG20N04S408ATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N04S408ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.78 |
| FET Type | Dual N-Channel | Dual N-Channel (Half Bridge / Independent) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS Trench MOSFET |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | β |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | β |
| Maximum Power Dissipation (P_D) | 65 W | β |
| Operating Junction Temperature | -55 degC to +175 degC | β |
| Package | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 degC peak reflow) | MSL1 (peak reflow 260 C) |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | β |
| Channel Count | 2 (independent) | β |
| Operating Mode | Enhancement mode, Normal Level | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) | β | 20 A (per channel) |
| Power Dissipation (PD) | β | 43 W |
| Gate Threshold (VGS(th)) | β | Logic-Level |
| Operating Temperature | β | -55 C to +175 C |
| AEC-Q101 Qualification | β | Yes |
| Avalanche Tested | β | 100% (per datasheet) |
| AOI Compatible | β | Yes (wettable flank) |