IPG20N04S4L07ATMA1 vs IPD50N04S408ATMA1 Comparison
Detailed side-by-side comparison of IPG20N04S4L07ATMA1 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N04S4L07ATMA1
IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΞ© | Infineon
IPG20N04S4L07ATMA1 β Active
Specification Comparison
| Parameter | IPG20N04S4L07ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ T2 | β |
| FET Type | 2x N-Channel (Dual, Independent) | β |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) | 20 A | β |
| RDS(on) Max @ VGS=10V | 7.2 mΞ© (typical) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge at VGS=10V] | β |
| Power Dissipation (PD) Max | 65 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-4 (TDSON-8-4) | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) | β |
| MSL Level | MSL1 (per JEDEC J-STD-020, 260Β°C peak reflow) | MSL1 (260 Β°C peak reflow) |
| AEC-Q101 Qualification | Qualified | β |
| Avalanche Tested | 100% (per datasheet) | 100 % Avalanche tested |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations | β |
| Product Family | β | OptiMOS-T2 |
| Polarity | β | N-Channel |
| Mode | β | Enhancement-mode |
| Drain-Source Voltage (V DS) | β | 40 V |
| Continuous Drain Current (I D, Tc) | β | 50 A |
| Power Dissipation (P D, Tc) | β | 46 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 |
| Green Package (RoHS) | β | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | β | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | β | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | β | [DATA_NEEDED: Q G typical] |