IPG20N04S4L08ATMA1 vs IAUC100N04S6L025ATMA1 Comparison
Detailed side-by-side comparison of IPG20N04S4L08ATMA1 by Infineon and IAUC100N04S6L025ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΞ© OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 β ActiveInfineon
IAUC100N04S6L025ATMA1
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N04S4L08ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPG20N04S4L08ATMA1 | β |
| FET Type | 2 N-Channel (Dual) | β |
| FET Feature | Logic Level Gate | β |
| Drain-to-Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id) @ 25Β°C | 20 A | β |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΞ© | β |
| Power Dissipation (Pd) | 54 W | β |
| Operating Temperature | -55Β°C to +175Β°C | β |
| Package / Case | PG-TDSON-8-4 (TDSON-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Series | OptiMOSβ’-T2, Automotive, AEC-Q101 | β |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Tested | 100% Avalanche Tested | β |
| RoHS / Green | RoHS Compliant, Green Product | β |
| Part Status | Active | β |
| Technology | β | OptiMOS 6 40V trench MOSFET |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | β | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | β | 62 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package | β | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |