IPG20N04S4L08ATMA1 vs IPG20N06S4L14AATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S4L08ATMA1 by Infineon and IPG20N06S4L14AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N04S4L08ATMA1

IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon

IPG20N04S4L08ATMA1 ✓ Active
Infineon
IPG20N06S4L14AATMA1

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Active

Specification Comparison

Parameter IPG20N04S4L08ATMA1 IPG20N06S4L14AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N04S4L08ATMA1 IPG20N06S4L14AATMA1
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-to-Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ
Power Dissipation (Pd) 54 W
Operating Temperature -55°C to +175°C
Package / Case PG-TDSON-8-4 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101
MSL Level MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Avalanche Tested 100% Avalanche Tested 100% (per datasheet)
RoHS / Green RoHS Compliant, Green Product
Part Status Active
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) 20 A (per channel)
Power Dissipation (PD) 50 W
RDS(on) at VGS=10V 13.7 mΩ typical
RDS(on) at VGS=4.5V 14 mΩ typical
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive Yes
Operating Temperature Range -55°C to +175°C (junction)
Package PG-TDSON-8-10 (Wettable Flank)
Automotive Qualification AEC-Q101
Peak Reflow Temperature 260°C
RoHS Compliance Green Product (RoHS compliant)
AOI Compatible Yes (Wettable Flank)
Technology OptiMOS™ Trench

Datasheets & Resources

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