IPG20N04S4L11ATMA1 vs IPG20N04S408ATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S4L11ATMA1 by Infineon and IPG20N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N04S4L11ATMA1

IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon

IPG20N04S4L11ATMA1 βœ“ Active
Infineon
IPG20N04S408ATMA1

IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon

IPG20N04S408ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N04S4L11ATMA1 IPG20N04S408ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.78
FET Type 2 N-Channel (Dual) Dual N-Channel
FET Feature Logic Level Gate β€”
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) @ 25C 20 A per channel β€”
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A 11.6 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
Maximum Power Dissipation (PD) 41 W β€”
Operating Temperature Range -55C to +175C β€”
Package PG-TDSON-8-4 (Super S08 / 8-TDSON EP) PG-TDSON-8-4 (SuperSO8 dual)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (260C peak reflow) MSL1 (260 degC peak reflow)
Avalanche Rating 100% Avalanche Tested β€”
Automotive Qualification AEC-Q101 Qualified β€”
RoHS Status Compliant (Green Product) Compliant (Green Product)
Technology OptiMOS-T2 trench OptiMOS (trench MOSFET)
Drain-Source Voltage (V_DSS) β€” 40 V
Continuous Drain Current (I_D, per channel) β€” 20 A at 25 degC case
R_DS(on) max @ V_GS=10V β€” 7.6 mOhm
Maximum Power Dissipation (P_D) β€” 65 W
Operating Junction Temperature β€” -55 degC to +175 degC
AEC-Q101 Qualified β€” Yes
Avalanche Rated β€” 100 percent tested
Channel Count β€” 2 (independent)
Operating Mode β€” Enhancement mode, Normal Level

Datasheets & Resources

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