IPG20N04S4L11ATMA1 vs IPG20N06S2L65AATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S4L11ATMA1 by Infineon and IPG20N06S2L65AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N04S4L11ATMA1

IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon

IPG20N04S4L11ATMA1 βœ“ Active
Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N04S4L11ATMA1 IPG20N06S2L65AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.78
FET Type 2 N-Channel (Dual) Dual N-Channel (Half Bridge / Independent)
FET Feature Logic Level Gate β€”
Drain-to-Source Voltage (VDS) 40 V 55 V
Continuous Drain Current (ID) @ 25C 20 A per channel β€”
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A 11.6 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
Maximum Power Dissipation (PD) 41 W β€”
Operating Temperature Range -55C to +175C β€”
Package PG-TDSON-8-4 (Super S08 / 8-TDSON EP) PG-TDSON-8-10 (TDSON-8 EP, wettable flank)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (260C peak reflow) MSL1 (peak reflow 260 C)
Avalanche Rating 100% Avalanche Tested β€”
Automotive Qualification AEC-Q101 Qualified β€”
RoHS Status Compliant (Green Product) Compliant (Green Product)
Technology OptiMOS-T2 trench OptiMOS Trench MOSFET
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS
Continuous Drain Current (ID) β€” 20 A (per channel)
Power Dissipation (PD) β€” 43 W
Gate Threshold (VGS(th)) β€” Logic-Level
Operating Temperature β€” -55 C to +175 C
AEC-Q101 Qualification β€” Yes
Avalanche Tested β€” 100% (per datasheet)
AOI Compatible β€” Yes (wettable flank)

Datasheets & Resources

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