IPG20N06S2L65AATMA1 vs IPG16N10S461AATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S2L65AATMA1 by Infineon and IPG16N10S461AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active
Infineon
IPG16N10S461AATMA1

IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΞ© MOSFET | Infineon

IPG16N10S461AATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S2L65AATMA1 IPG16N10S461AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS β€”
FET Type Dual N-Channel (Half Bridge / Independent) β€”
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 20 A (per channel) 16 A
Power Dissipation (PD) 43 W β€”
Gate Threshold (VGS(th)) Logic-Level β€”
Technology OptiMOS Trench MOSFET OptiMOSβ„’ trench
Package PG-TDSON-8-10 (TDSON-8 EP, wettable flank) PG-TDSON-8-10 (Wettable Flank)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C β€”
AEC-Q101 Qualification Yes β€”
MSL Level MSL1 (peak reflow 260 C) [DATA_NEEDED: MSL rating]
RoHS Status Compliant (Green Product) Compliant
Avalanche Tested 100% (per datasheet) β€”
AOI Compatible Yes (wettable flank) β€”
Product Type β€” Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) β€” 100 V
On-Resistance R_DS(on) typ. β€” 61 mΞ©
Total Power Dissipation (Ptot) β€” 29 W (T_C = 25Β°C)
Configuration β€” 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. β€” [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature β€” 175 Β°C
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Terminal Count β€” 8
Built-in Body Diode β€” Yes
Channel Mode β€” Enhancement

Datasheets & Resources

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