IPG20N06S2L65AATMA1 vs IPG20N04S408ATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S2L65AATMA1 by Infineon and IPG20N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active
Infineon
IPG20N04S408ATMA1

IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon

IPG20N04S408ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S2L65AATMA1 IPG20N04S408ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.78
Manufacturer Infineon Technologies β€”
Series OptiMOS β€”
FET Type Dual N-Channel (Half Bridge / Independent) Dual N-Channel
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 20 A (per channel) β€”
Power Dissipation (PD) 43 W β€”
Gate Threshold (VGS(th)) Logic-Level β€”
Technology OptiMOS Trench MOSFET OptiMOS (trench MOSFET)
Package PG-TDSON-8-10 (TDSON-8 EP, wettable flank) PG-TDSON-8-4 (SuperSO8 dual)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C β€”
AEC-Q101 Qualification Yes β€”
MSL Level MSL1 (peak reflow 260 C) MSL1 (260 degC peak reflow)
RoHS Status Compliant (Green Product) Compliant (Green Product)
Avalanche Tested 100% (per datasheet) β€”
AOI Compatible Yes (wettable flank) β€”
Drain-Source Voltage (V_DSS) β€” 40 V
Continuous Drain Current (I_D, per channel) β€” 20 A at 25 degC case
R_DS(on) max @ V_GS=10V β€” 7.6 mOhm
Maximum Power Dissipation (P_D) β€” 65 W
Operating Junction Temperature β€” -55 degC to +175 degC
AEC-Q101 Qualified β€” Yes
Avalanche Rated β€” 100 percent tested
Channel Count β€” 2 (independent)
Operating Mode β€” Enhancement mode, Normal Level

Datasheets & Resources

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