IPG20N06S2L65AATMA1 vs IPG20N04S4L11ATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S2L65AATMA1 by Infineon and IPG20N04S4L11ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active
Infineon
IPG20N04S4L11ATMA1

IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon

IPG20N04S4L11ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S2L65AATMA1 IPG20N04S4L11ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.39
Manufacturer Infineon Technologies β€”
Series OptiMOS β€”
FET Type Dual N-Channel (Half Bridge / Independent) 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) 55 V 40 V
Continuous Drain Current (ID) 20 A (per channel) β€”
Power Dissipation (PD) 43 W β€”
Gate Threshold (VGS(th)) Logic-Level β€”
Technology OptiMOS Trench MOSFET OptiMOS-T2 trench
Package PG-TDSON-8-10 (TDSON-8 EP, wettable flank) PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C β€”
AEC-Q101 Qualification Yes β€”
MSL Level MSL1 (peak reflow 260 C) 1 (260C peak reflow)
RoHS Status Compliant (Green Product) Compliant (Green Product)
Avalanche Tested 100% (per datasheet) β€”
AOI Compatible Yes (wettable flank) β€”
FET Feature β€” Logic Level Gate
Continuous Drain Current (ID) @ 25C β€” 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A β€” 11.6 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) β€” 41 W
Operating Temperature Range β€” -55C to +175C
Avalanche Rating β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101 Qualified

Datasheets & Resources

Browse All Products Create BOM Request Quote