IPG20N06S2L65AATMA1 vs IPG20N10S4L35ATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S2L65AATMA1 by Infineon and IPG20N10S4L35ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N06S2L65AATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOSβ’, Automotive |
| FET Type | Dual N-Channel (Half Bridge / Independent) | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) | 20 A (per channel) | β |
| Power Dissipation (PD) | 43 W | β |
| Gate Threshold (VGS(th)) | Logic-Level | β |
| Technology | OptiMOS Trench MOSFET | β |
| Package | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C | 175Β°C max junction |
| AEC-Q101 Qualification | Yes | β |
| MSL Level | MSL1 (peak reflow 260 C) | MSL1 (up to 260Β°C peak reflow) |
| RoHS Status | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) | β |
| AOI Compatible | Yes (wettable flank) | β |
| Part Number | β | IPG20N10S4L35ATMA1 |
| FET Feature | β | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | β | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25Β°C | β | 20 A |
| R<sub>DS(on)</sub> Max | β | 35 mΞ© @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | β | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | β | 43 W |
| Package / Case | β | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Automotive Qualification | β | AEC-Q101 |
| Avalanche Rated | β | 100% Avalanche Tested |