IPG20N06S2L65ATMA1 vs BSC036NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S2L65ATMA1 by Infineon and BSC036NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N06S2L65ATMA1
IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon
IPG20N06S2L65ATMA1 β ActiveInfineon
BSC036NE7NS3GATMA1
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N06S2L65ATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.82 |
| FET Type | Dual N-Channel, Logic Level | N-Channel |
| Technology | OptiMOS-T2 (Planar Trench 55V) | β |
| Drain-Source Voltage (VDS) | 55 V | 75 V |
| Continuous Drain Current (ID) | 20 A per channel | β |
| RDS(on) at VGS=10V | 65 mΞ© typical | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | β |
| Total Power Dissipation (Ptot) | 43 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55C to +175C |
| Package | PG-TDSON-8-4 (TDSON-8 EP) | PG-TDSON-8-7 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260Β°C peak reflow) | 1 |
| Avalanche Rating | 100% Avalanche Tested | β |
| Automotive Qualification | AEC-Q101 Qualified | β |
| RoHS Compliance | RoHS Compliant (Green Product) | β |
| Packaging | Tape & Reel (TMA1 suffix) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Pulsed Drain Current (IDM) | β | 400 A |
| On-Resistance (RDS(on) max @ VGS=10V) | β | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | β | 45 nC |
| Rise Time (tr typ) | β | 13 ns |
| Fall Time (tf typ) | β | 11 ns |
| Power Dissipation (PD max, Tc=25C) | β | 156 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 0.8 C/W |
| RoHS Status | β | ROHS3 Compliant |