IPG20N06S2L65ATMA1 vs IPG20N04S408ATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S2L65ATMA1 by Infineon and IPG20N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 βœ“ Active
Infineon
IPG20N04S408ATMA1

IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon

IPG20N04S408ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S2L65ATMA1 IPG20N04S408ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.78
FET Type Dual N-Channel, Logic Level Dual N-Channel
Technology OptiMOS-T2 (Planar Trench 55V) OptiMOS (trench MOSFET)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 20 A per channel β€”
RDS(on) at VGS=10V 65 mΞ© typical β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic level) β€”
Total Power Dissipation (Ptot) 43 W β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package PG-TDSON-8-4 (TDSON-8 EP) PG-TDSON-8-4 (SuperSO8 dual)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (260Β°C peak reflow) MSL1 (260 degC peak reflow)
Avalanche Rating 100% Avalanche Tested β€”
Automotive Qualification AEC-Q101 Qualified β€”
RoHS Compliance RoHS Compliant (Green Product) β€”
Packaging Tape & Reel (TMA1 suffix) β€”
Drain-Source Voltage (V_DSS) β€” 40 V
Continuous Drain Current (I_D, per channel) β€” 20 A at 25 degC case
R_DS(on) max @ V_GS=10V β€” 7.6 mOhm
Maximum Power Dissipation (P_D) β€” 65 W
Operating Junction Temperature β€” -55 degC to +175 degC
AEC-Q101 Qualified β€” Yes
RoHS Status β€” Compliant (Green Product)
Avalanche Rated β€” 100 percent tested
Channel Count β€” 2 (independent)
Operating Mode β€” Enhancement mode, Normal Level

Datasheets & Resources

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