IPG20N06S2L65ATMA1 vs IPG20N06S2L65AATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S2L65ATMA1 by Infineon and IPG20N06S2L65AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 βœ“ Active
Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S2L65ATMA1 IPG20N06S2L65AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.78
FET Type Dual N-Channel, Logic Level Dual N-Channel (Half Bridge / Independent)
Technology OptiMOS-T2 (Planar Trench 55V) OptiMOS Trench MOSFET
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 20 A per channel 20 A (per channel)
RDS(on) at VGS=10V 65 mΞ© typical β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic level) β€”
Total Power Dissipation (Ptot) 43 W β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
Package PG-TDSON-8-4 (TDSON-8 EP) PG-TDSON-8-10 (TDSON-8 EP, wettable flank)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (260Β°C peak reflow) MSL1 (peak reflow 260 C)
Avalanche Rating 100% Avalanche Tested β€”
Automotive Qualification AEC-Q101 Qualified β€”
RoHS Compliance RoHS Compliant (Green Product) β€”
Packaging Tape & Reel (TMA1 suffix) β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS
Drain-to-Source Voltage (VDS) β€” 55 V
Power Dissipation (PD) β€” 43 W
Gate Threshold (VGS(th)) β€” Logic-Level
Operating Temperature β€” -55 C to +175 C
AEC-Q101 Qualification β€” Yes
RoHS Status β€” Compliant (Green Product)
Avalanche Tested β€” 100% (per datasheet)
AOI Compatible β€” Yes (wettable flank)

Datasheets & Resources

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