IPG20N06S4L14AATMA1 vs BSC076N06NS3GATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S4L14AATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N06S4L14AATMA1
IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΞ© MOSFET | Infineon
IPG20N06S4L14AATMA1 β ActiveInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N06S4L14AATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N06S4L14AATMA1 | β |
| FET Type | 2 N-Channel (Dual) | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) | 20 A (per channel) | β |
| Power Dissipation (PD) | 50 W | β |
| RDS(on) at VGS=10V | 13.7 mΞ© typical | β |
| RDS(on) at VGS=4.5V | 14 mΞ© typical | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | β |
| Logic-Level Gate Drive | Yes | β |
| Operating Temperature Range | -55Β°C to +175Β°C (junction) | -55C to +150C |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| Peak Reflow Temperature | 260Β°C | β |
| Avalanche Tested | 100% (per datasheet) | β |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant |
| AOI Compatible | Yes (Wettable Flank) | β |
| Technology | OptiMOSβ’ Trench | N-Channel Trench MOSFET |
| Product Family | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25C | β | 50 A |
| On-Resistance RDS(on) max at VGS=10V | β | 7.6 mΞ© |
| On-Resistance RDS(on) max at VGS=4.5V | β | 10.4 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 69 W |
| MSL Level | β | 1 (unlimited) |
| Halogen-Free | β | Yes (per Infineon product page) |