IPG20N06S4L14AATMA1 vs IPD33CN10NGATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S4L14AATMA1 by Infineon and IPD33CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΞ© MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΞ© MOSFET | Infineon

IPG20N06S4L14AATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S4L14AATMA1 IPD33CN10NGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.32
Manufacturer Infineon Technologies β€”
Part Number IPG20N06S4L14AATMA1 β€”
FET Type 2 N-Channel (Dual) N-Channel
Drain-to-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) 20 A (per channel) β€”
Power Dissipation (PD) 50 W β€”
RDS(on) at VGS=10V 13.7 mΞ© typical β€”
RDS(on) at VGS=4.5V 14 mΞ© typical β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] β€”
Logic-Level Gate Drive Yes β€”
Operating Temperature Range -55Β°C to +175Β°C (junction) -55C to +175C (TJ)
Package PG-TDSON-8-10 (Wettable Flank) PG-TO252-3 (DPAK), Surface Mount
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
Peak Reflow Temperature 260Β°C β€”
Avalanche Tested 100% (per datasheet) β€”
RoHS Compliance Green Product (RoHS compliant) β€”
AOI Compatible Yes (Wettable Flank) β€”
Technology OptiMOSβ„’ Trench OptiMOS (Trench)
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 27 A
Power Dissipation (PD, Tc) β€” 58 W
Pin Count β€” 3 (Gate, Drain, Source)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: typical Qg]
RoHS Status β€” Compliant
Lead-Free β€” Yes
MSL Level β€” 1

Datasheets & Resources

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