IPG20N10S436AATMA1 vs IPD031N06L3GATMA1 Comparison

Detailed side-by-side comparison of IPG20N10S436AATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N10S436AATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.48
Configuration Dual N-Channel (2 Elements with Built-in Diode) β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) 20 A (per channel) β€”
Total Power Dissipation (PD) 43 W β€”
Operating Mode Enhancement Mode β€”
Package PG-TDSON-8-10 (Wettable Flank) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C β€”
JESD-609 Code e3 β€”
MSL Level MSL1 (260 C peak reflow) 1 (Unlimited)
Automotive Qualification AEC-Q101 β€”
Avalanche Tested 100% β€”
AOI Compatible Yes (Wettable Flank) β€”
RoHS Status Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level β€”
FET Type β€” N-Channel
Technology β€” MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at TC=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” 400 A
Maximum Power Dissipation (PD) at TC=25Β°C β€” 167 W
RDS(on) Max at VGS=10V β€” 3.1 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) β€” 4.5 V, 10 V
Total Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typical value]
Operating Temperature Range β€” -55Β°C to +175Β°C
Series β€” OptiMOS 3

Datasheets & Resources

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