IPL60R065C7AUMA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IPL60R065C7AUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R065C7AUMA1
IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΞ© N-Ch MOSFET | Infineon
IPL60R065C7AUMA1 β ActiveInfineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveSpecification Comparison
| Parameter | IPL60R065C7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS P7 |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Process Technology | CoolMOS C7 (Superjunction) | β |
| Maximum Drain-Source Voltage (V_DS) | 600 V | β |
| Continuous Drain Current (I_D, T_C=25Β°C) | 29 A | β |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΞ© | β |
| Maximum Power Dissipation (P_D, T_C=25Β°C) | 180 W | β |
| Gate-Source Voltage (V_GS, max) | Β±20 V | β |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V | β |
| Package / Case | PG-VSON-4-1 (Source-Down) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T_J) | -55C to +150C |
| RoHS Status | Compliant with Exemption | Compliant |
| Automotive Qualified (AEC-Q101) | No | β |
| Total Gate Charge (Q_G, typ.) | [DATA_NEEDED: Q_G typ. value] | β |
| Output Capacitance Stored Energy (E_OSS) | [DATA_NEEDED: E_OSS typ. value] | β |
| Technology | β | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | β | 600 V |
| On-Resistance (RDS(on)) max | β | 105 mΞ© |
| Continuous Drain Current (ID) at Tc | β | 33 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | β | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.5 V |
| Gate Charge (Qg) typ | β | 45 nC |
| Package | β | PG-VSON-4 (4-pin SMD with exposed pad) |
| Channel Type | β | N-Channel |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Halogen-Free | β | Yes |
| Lead-Free | β | Yes |