IPL60R085P7AUMA1 vs IPB60R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPL60R085P7AUMA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R085P7AUMA1
IPL60R085P7AUMA1 - 600V 85mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R085P7AUMA1 β Active
Specification Comparison
| Parameter | IPL60R085P7AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.65 | $0.88 |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 39 A | β |
| Continuous Drain Current (ID, Tc=100Β°C) | 24 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance (RDS(on)) | 85 mΞ© at VGS=10 V | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | β |
| Maximum Power Dissipation (Ptot) | 154 W | β |
| Operating Junction Temperature | -40 Β°C to +150 Β°C | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| ESD Robustness (HBM) | >2 kV (all pins) | β |
| Technology | CoolMOS P7 superjunction (7th generation) | Superjunction (SJ) |
| Package | PG-VSON-4 (VSON-4, source-down) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | β |
| Polarity | N-channel | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS P7 (600 V) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | β | 600 V |
| Continuous Drain Current (I_D, T_C=25Β°C) | β | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | β | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | β | 3.5 V |
| Power Dissipation P_D (T_C=25Β°C) | β | 53 W |
| Pin Count | β | 3 (2 + Tab) |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (T_j max) |
| Configuration | β | Single N-Channel |
| Lead-Free | β | Yes |
| Generation | β | 7th Gen CoolMOS (successor to P6) |