IPL60R105P7AUMA1 vs IPL60R085P7AUMA1 Comparison

Detailed side-by-side comparison of IPL60R105P7AUMA1 by Infineon and IPL60R085P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL60R085P7AUMA1 IPL60R085P7AUMA1 - 600V 85mΞ© CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 - 600V 85mΞ© CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 βœ“ Active

Specification Comparison

Parameter IPL60R105P7AUMA1 IPL60R085P7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $2.65
Manufacturer Infineon Technologies β€”
Series CoolMOS P7 β€”
Technology Superjunction (SJ) N-Channel Power MOSFET CoolMOS P7 superjunction (7th generation)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΞ© β€”
Continuous Drain Current (ID) at Tc 33 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc 137 W β€”
Gate Threshold Voltage (VGS(th)) typ 3.5 V β€”
Gate Charge (Qg) typ 45 nC β€”
Operating Temperature Range -55C to +150C β€”
Package PG-VSON-4 (4-pin SMD with exposed pad) PG-VSON-4 (VSON-4, source-down)
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant
Halogen-Free Yes β€”
Lead-Free Yes β€”
Continuous Drain Current (ID, Tc=25Β°C) β€” 39 A
Continuous Drain Current (ID, Tc=100Β°C) β€” 24 A
Static Drain-Source On-Resistance (RDS(on)) β€” 85 mΞ© at VGS=10 V
Gate Threshold Voltage (VGS(th)) β€” 3.5 V
Maximum Power Dissipation (Ptot) β€” 154 W
Operating Junction Temperature β€” -40 Β°C to +150 Β°C
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
ESD Robustness (HBM) β€” >2 kV (all pins)
Qualification β€” JEDEC industrial
Polarity β€” N-channel

Datasheets & Resources

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