IPL60R105P7AUMA1 vs IPL60R125P7AUMA1 Comparison
Detailed side-by-side comparison of IPL60R105P7AUMA1 by Infineon and IPL60R125P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveInfineon
IPL60R125P7AUMA1
IPL60R125P7AUMA1 - 600V CoolMOS P7 MOSFET 125mΞ© 27A | Infineon
IPL60R125P7AUMA1 β ActiveSpecification Comparison
| Parameter | IPL60R105P7AUMA1 | IPL60R125P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΞ© | β |
| Continuous Drain Current (ID) at Tc | 33 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (Ptot) at Tc | 137 W | β |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | β |
| Gate Charge (Qg) typ | 45 nC | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-VSON-4 (4-pin SMD with exposed pad) | ThinPAK 8x8 (4-pin + exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | β |
| Product Family | β | CoolMOS P7 |
| Continuous Drain Current (ID, Tc=25C) | β | 27 A |
| On-State Resistance RDS(on) max | β | 125 mOhm |
| Gate Charge (Qg, typ) | β | 36 nC |
| Total Gate Charge Qg (typ) | β | 36 nC |
| Output Capacitance Coss (typ) | β | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | β | [DATA_NEEDED: Qrr] |
| Rise Time / Fall Time (tr/tf) | β | [DATA_NEEDED: tr/tf] |
| Gate-Source Voltage (VGS) | β | +/-20 V (max) |
| Gate Threshold Voltage VGS(th), typ | β | 3.5 V |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |
| Operating Junction Temperature | β | -55 C to +150 C |
| Moisture Sensitivity Level (MSL) | β | MSL 2 (per JEDEC J-STD-020) |
| Pin Configuration | β | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 |