IPL60R115CFD7AUMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPL60R115CFD7AUMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R115CFD7AUMA1
IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon
IPL60R115CFD7AUMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R115CFD7AUMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 | β |
| Series | CoolMOS CFD7 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 22 A | β |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | β |
| Package / Case | PG-VSON-4 (5x6 mm) with exposed pad | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | Superjunction (SJ) N-Channel MOSFET |
| Integrated Body Diode | Yes - fast body diode (CFD) | Yes - ultra-fast CoolMOS CFD7 diode |
| Application | Resonant high-power topologies (LLC, PFC) | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55Β°C to +150Β°C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| Pin Count | 4 | β |
| Quantity per Reel | [DATA_NEEDED: reel qty] | β |
| Product Family | β | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Package | β | PG-TO263-3-2 (D2PAK) |
| MSL Level | β | 1 |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |