IPL60R285P7AUMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IPL60R285P7AUMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R285P7AUMA1
IPL60R285P7AUMA1 - 600V 285mΞ© 13A CoolMOS P7 MOSFET | Infineon
IPL60R285P7AUMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R285P7AUMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | Automotive OptiMOS 7 |
| Technology | Superjunction (SJ) N-channel MOSFET | OptiMOS 7 trench MOSFET |
| Drain-to-Source Voltage (V(BR)DSS) | 600 V | β |
| Continuous Drain Current (ID) at Tc=25C | 13 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | β |
| On-State Resistance (RDS(on)) max at VGS=10V | 285 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | β |
| Output Capacitance (Coss) typ | [DATA_NEEDED: Coss value] | β |
| Maximum Power Dissition (PD) at Tc=25C | 59 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +175Β°C (TJ) |
| Package / Case | PG-VSON-4 (surface mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel, 4 pins (Gate, Drain, Source, Tab) | β |
| RoHS Status | Compliant | Compliant |
| Gate ESD Protection | Integrated | β |
| MSL Level | 1 (per Infineon PG-VSON-4 family) | 1 (per JEDEC J-STD-020, typical for this package) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Package | β | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |