IPL60R285P7AUMA1 vs IKD15N60RFATMA1 Comparison

Detailed side-by-side comparison of IPL60R285P7AUMA1 by Infineon and IKD15N60RFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL60R285P7AUMA1

IPL60R285P7AUMA1 - 600V 285mΞ© 13A CoolMOS P7 MOSFET | Infineon

IPL60R285P7AUMA1 βœ“ Active
Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 βœ“ Active

Specification Comparison

Parameter IPL60R285P7AUMA1 IKD15N60RFATMA1
Brand Infineon Infineon
Category MOSFETs IGBTs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $1.35
Manufacturer Infineon Technologies β€”
Series CoolMOS P7 β€”
Technology Superjunction (SJ) N-channel MOSFET TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
Drain-to-Source Voltage (V(BR)DSS) 600 V β€”
Continuous Drain Current (ID) at Tc=25C 13 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] β€”
On-State Resistance (RDS(on)) max at VGS=10V 285 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] β€”
Output Capacitance (Coss) typ [DATA_NEEDED: Coss value] β€”
Maximum Power Dissition (PD) at Tc=25C 59 W β€”
Operating Temperature Range -55C to +150C (junction) β€”
Package / Case PG-VSON-4 (surface mount) β€”
Mounting Type Surface Mount Surface Mount
Configuration Single N-channel, 4 pins (Gate, Drain, Source, Tab) β€”
RoHS Status Compliant β€”
Gate ESD Protection Integrated β€”
MSL Level 1 (per Infineon PG-VSON-4 family) β€”
Collector-Emitter Voltage (VCES) β€” 600 V
Continuous Collector Current (IC at TC=25C) β€” 30 A
Continuous Collector Current (IC at TC=100C) β€” 15 A
Pulsed Collector Current (ICM) β€” [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES) β€” +/-20 V
Gate-Emitter Threshold (VGE(th)) β€” [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V β€” 1.5 V (typical)
Maximum Power Dissipation (Ptot) β€” 250 W
Operating Junction Temperature β€” -40C to +175C
Integrated Anti-Parallel Diode β€” Yes (RC-Drives Fast, co-packaged)
Package β€” PG-TO252-3 (DPAK), 3 pins (2 + tab)
Switching Speed Class β€” Hard-switching, RC-Drives Fast
Target Application β€” Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance β€” Compliant

Datasheets & Resources

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