IPN70R1K4P7SATMA1 vs IPD70R1K4P7SAUMA1 Comparison

Detailed side-by-side comparison of IPN70R1K4P7SATMA1 by Infineon and IPD70R1K4P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 βœ“ Active
Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPN70R1K4P7SATMA1 IPD70R1K4P7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS P7 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (V(BR)DSS) 700 V β€”
Continuous Drain Current (ID) at TC 4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) 1.4 ohm class (per '1K4' suffix) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (PD) at TC 6.2 W β€”
Technology Superjunction (CoolMOS P7) Superjunction (CoolMOS P7)
Package PG-SOT223 (3-pin + tab, surface mount) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (TJ) β€”
Configuration Single with built-in diode β€”
Pin Count 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
DPAK Footprint Compatible Yes (drop-in alternative to DPAK per datasheet) β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Part Family β€” CoolMOS P7 (700V Superjunction)
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 700 V
Continuous Drain Current (ID) at Tc=25C β€” 4 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max at VGS=10V, ID β€” 1.4 ohm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Total Power Dissipation (Ptot) at Tc=25C β€” 23 W
Operating Junction Temperature β€” -55C to +150C
Avalanche Energy Rated β€” Yes (100% avalanche tested)
ESD Protection β€” Integrated (per datasheet)

Datasheets & Resources

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