IPN70R1K4P7SATMA1 vs IPN60R2K0PFD7SATMA1 Comparison

Detailed side-by-side comparison of IPN70R1K4P7SATMA1 by Infineon and IPN60R2K0PFD7SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 βœ“ Active
Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 βœ“ Active

Specification Comparison

Parameter IPN70R1K4P7SATMA1 IPN60R2K0PFD7SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.28
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS P7 CoolMOS PFD7
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (V(BR)DSS) 700 V 600 V
Continuous Drain Current (ID) at TC 4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Static Drain-Source On-Resistance (RDS(on)) 1.4 ohm class (per '1K4' suffix) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 3.8 nC @ 10 V (per UTMel listing)
Total Power Dissipation (PD) at TC 6.2 W β€”
Technology Superjunction (CoolMOS P7) CoolMOS superjunction
Package PG-SOT223 (3-pin + tab, surface mount) PG-SOT223-3-1 (SOT-223)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (TJ) [DATA_NEEDED: operating temperature range]
Configuration Single with built-in diode β€”
Pin Count 3 (Gate, Drain, Source) β€”
DPAK Footprint Compatible Yes (drop-in alternative to DPAK per datasheet) β€”
RoHS Status Compliant Compliant (per Newark listing)
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Channel Type β€” N-Channel
Continuous Drain Current (Tc) β€” 3 A
Power Dissipation (Tc) β€” 6 W
RDS(on) typical @ VGS=10V β€” 2.0 Ohm
RDS(on) max @ VGS=10V β€” 1.626 Ohm (per Infineon product page)
Gate-Source Voltage (VGS) max β€” Β±20 V
Input Capacitance (Ciss) β€” 134 pF @ 400 V (per UTMel listing)

Datasheets & Resources

Browse All Products Create BOM Request Quote