IPN70R1K4P7SATMA1 vs IPN70R2K0P7SATMA1 Comparison
Detailed side-by-side comparison of IPN70R1K4P7SATMA1 by Infineon and IPN70R2K0P7SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN70R2K0P7SATMA1
IPN70R2K0P7SATMA1 - 700V CoolMOS P7 MOSFET, 3A | Infineon
IPN70R2K0P7SATMA1 β ActiveSpecification Comparison
| Parameter | IPN70R1K4P7SATMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V(BR)DSS) | 700 V | β |
| Continuous Drain Current (ID) at TC | 4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.5 V (typical) |
| Total Power Dissipation (PD) at TC | 6.2 W | β |
| Technology | Superjunction (CoolMOS P7) | Superjunction (SJ) N-Channel MOSFET |
| Package | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223 (3 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) | -55 Β°C to +150 Β°C |
| Configuration | Single with built-in diode | β |
| Pin Count | 3 (Gate, Drain, Source) | β |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | β |
| RoHS Status | Compliant | Compliant (ROHS3) |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Part Family | β | CoolMOS P7 |
| Polarity / Channel Type | β | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 700 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 3 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 6 W |
| On-Resistance (RDS(on)) | β | 2.0 Ξ© (max, VGS=10 V) |
| Gate-Source Voltage (VGS max) | β | Β±20 V |
| Integrated ESD Diode | β | Yes |